FORMATION OF $\sqrt {21} \times \sqrt {21} $ STRUCTURE BY GOLD DEPOSITION ON ${\rm{Si}}\left( {111} \right)\sqrt 3 \times \sqrt 3\mbox{-}{\rm{Ag}}$ SURFACE AND THE WAVERING BEHAVIOR

A. Ichimiya, Hikaru Nomura, Yoshimi Horio, +3

Surface Review and Letters

EngineeringMetallic NanomaterialsTunneling MicroscopyFormation OfGold Deposition +14

High-temperature scanning tunneling microscopy study of the ‘16×2’⇔(1×1) phase transition on an Si(110) surface

Youiti Yamamoto, Takashi Sueyoshi, Tomoshige Sato, +1

Surface Science

Materials ScienceSurface CharacterizationEngineeringTunneling MicroscopyPhysics +7

Reductive Ring Opening of <i>o</i>-Nitrobenzylidene Acetals of Monosaccharides:  Synthesis and Photolysis of Some Photolabile Sugars

Soichiro Watanabe, Takashi Sueyoshi, Megumi Ichihara, +2

Organic Letters

Scanning tunneling microscopy observation of hydrogen-terminated Si(111) surfaces at room temperature

Koji Usuda, Haruichi Kanaya, Kazutaka YAMADA, +3

Applied Physics Letters

Materials ScienceRoom TemperatureSurface CharacterizationEngineeringHydrogen-terminated Si +12

Scanning tunneling microscopy on Ga/Si(100)

Hiroshi Sakama, Akira Kawazu, Takashi Sueyoshi, +2

Physical review. B, Condensed matter

Materials ScienceEngineeringTunneling MicroscopyPhysicsMicroscopy +10

Observation of surface reconstruction and nano-fabrication on silicon under high temperature using a UHV-STM

M. Iwatsuki, Shinichi Kitamura, T. Satô, +1

Applied Surface Science

Materials ScienceWafer Scale ProcessingEngineeringMicrofabricationSurface Science +8

Kink-induced buckled dimers on Si(001) and Ge(001) at room temperature studied by scanning tunneling microscopy

Hiroshi Tochihara, Tomoshige Sato, Takashi Sueyoshi, +2

Physical review. B, Condensed matter

Materials ScienceRoom TemperatureEngineeringDimer RowsCrystalline Defects +10

Dynamic observation of In adsorption on Si(111) surfaces by UHV high-temperature scanning tunneling microscopy

Y. Tanishiro, Kazuya KANEKO, Hiroki Minoda, +4

Surface Science

Materials ScienceSurface CharacterizationUhv High-temperatureEngineeringTunneling Microscopy +7

Al-√3 × √3 domain structure on Si(111)-7×7 observed by scanning tunneling microscopy

Katsuya Takaoka, Masamichi Yoshimura, Takafumi Yao, +3

Physical review. B, Condensed matter

EngineeringKink SitesSemiconductorsTunneling MicroscopyQuantum Materials +14

Multilayer growth process of C60 on a Si(111) 7 × 7 surface

Tomoshige Sato, Takashi Sueyoshi, Masashi Iwatsuki

Surface Science

Materials ScienceSurface CharacterizationEngineeringSurface AnalysisSurface Science +3