Concepedia

F. Dwikusuma

FD

6

Publications

357

Citations

6

H-Index

2001

Active since

Affiliations

University of Wisconsin–Madison(Current)

F. Dwikusuma is an author at University of Wisconsin–Madison specializing in applied physics, engineering, and surface science.

Top concepts

EngineeringApplied PhysicsSurface ScienceMaterial ScienceCrystalline DefectsPhysicsThin FilmsSemiconductorsChemical EngineeringMaterials Engineering

Publications per year

2001–2003

6

Publications

6

X-ray photoemission determination of the Schottky barrier height of metal contacts to <i>n</i>–GaN and <i>p</i>–GaN

K. A. Rickert, Arthur B. Ellis, Jong Kyu Kim et al. · Journal of Applied Physics · 2002 · 108 citations · Full text

Wide-bandgap Semiconductor, Engineering, Band Gap +18

X-ray photoelectron spectroscopic study on sapphire nitridation for GaN growth by hydride vapor phase epitaxy: Nitridation mechanism

F. Dwikusuma, T. F. Kuech · Journal of Applied Physics · 2003 · 74 citations

Materials Science, Aluminium Nitride, Chemical Engineering +14

X-ray photoemission spectroscopic investigation of surface treatments, metal deposition, and electron accumulation on InN

K. A. Rickert, Arthur B. Ellis, F. J. Himpsel et al. · Applied Physics Letters · 2003 · 73 citations · Full text

X-ray Spectroscopy, Engineering, Surface Treatments +17

Study on Sapphire Surface Preparation for III-Nitride Heteroepitaxial Growth by Chemical Treatments

F. Dwikusuma, Dovas A. Saulys, T. F. Kuech · Journal of The Electrochemical Society · 2002 · 68 citations

Atomic Force Microscopy, Aluminium Nitride, Engineering +20

The impact of initial growth and substrate nitridation on thick GaN growth on sapphire by hydride vapor phase epitaxy

Shulin Gu, Rong Zhang, Yi Shi et al. · Journal of Crystal Growth · 2001 · 23 citations

Materials Science, Materials Engineering, Engineering +5

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