Statistics
Publications
38
Citations
2K
H-Index
22
Active since
1994
J. Diener is an author at Technical University of Munich specializing in engineering, applied physics, and optical properties.
Publications per year
1994–2010
38
38
Ordering and self-organization in nanocrystalline silicon
G. F. Grom, D. J. Lockwood, J. P. McCaffrey et al. · Nature · 2000 · 234 citations
Optical absorption cross sections of Si nanocrystals
D. Kovalev, J. Diener, H. Heckler et al. · Physical review. B, Condensed matter · 2000 · 187 citations
Optical Materials, Engineering, Absorption Cross Section +16
Exciton fine structure in undoped GaN epitaxial films
D. Volm, K. Oettinger, T. Streibl et al. · Physical review. B, Condensed matter · 1996 · 156 citations
Wide-bandgap Semiconductor, Layer Thickness, Photoluminescence +12
The temperature dependence of the absorption coefficient of porous silicon
D. Kovalev, G. Polisski, M. Ben‐Chorin et al. · Journal of Applied Physics · 1996 · 112 citations
Porous Si anisotropy from photoluminescence polarization
D. Kovalev, M. Ben Chorin, J. Diener et al. · Applied Physics Letters · 1995 · 107 citations
Materials Science, Luminescence Polarization, Photoluminescence +13
1–5 of 38