A. Rai

Origin of gate hysteresis in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-type Si-doped AlGaAs/GaAs heterostructures

A. M. Burke, David E. J. Waddington, Damon J. Carrad et al. · Physical Review B · 2012 · 13 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

The effect of (NH₄)₂S_<i>x</i>passivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices

Damon J. Carrad, A. M. Burke, Peter J. Reece et al. · Journal of Physics Condensed Matter · 2013 · 12 citations

Engineering, Materials Engineering, Materials Science +17

Electrical spin injection in InAs quantum dots at room temperature and adjustment of the emission wavelength for spintronic applications

Arne Ludwig, R. Roescu, A. Rai et al. · Journal of Crystal Growth · 2010 · 11 citations

Natural Sciences, Materials Science, Physics +13