A. Rutz

Highly efficient optically pumped vertical-emitting semiconductor laser with more than 20 W average output power in a fundamental transverse mode

B. Rudin, A. Rutz, Martin Hoffmann et al. · Optics Letters · 2008 · 137 citations

Optical Pumping, Photonics, Engineering +10

Passively modelocked GaInNAs VECSEL at centre wavelength around 1.3 µm

A. Rutz, V. Liverini, D. J. H. C. Maas et al. · Electronics Letters · 2006 · 27 citations

1.5 µm GaInNAs semiconductor saturable absorber for passively modelocked solid-state lasers

A. Rutz, Rachel Grange, V. Liverini et al. · Electronics Letters · 2005 · 24 citations

Effects of rapid thermal annealing conditions on GaInNAs band gap blueshift and photoluminescence intensity

V. Liverini, A. Rutz, U. Keller et al. · Journal of Applied Physics · 2006 · 18 citations

Categoryquantum Electronics, Optical Materials, Engineering +16

Nonlinear absorption edge properties of 1.3-μm GaInNAs saturable absorbers

Rachel Grange, A. Rutz, V. Liverini et al. · Applied Physics Letters · 2005 · 16 citations

Nonlinear Reflectivity Measurements, Optical Materials, Engineering +18