Hironori Ando

Strong band edge luminescence from InN films grown on Si substrates by electron cyclotron resonance-assisted molecular beam epitaxy

Tokuo Yodo, Hiroaki Yona, Hironori Ando et al. · Applied Physics Letters · 2002 · 74 citations

Engineering, Optoelectronic Devices, Luminescence Property +17

Growth and Characterization of InN Heteroepitaxial Layers Grown on Si Substrates by ECR-Assisted MBE

Tokuo Yodo, Hironori Ando, Daiki Nosei et al. · physica status solidi (b) · 2001 · 21 citations

Crystal Structure, Optical Materials, Engineering +22

Damage Due to Nitrogen Molecular Ions of GaN Heteroepitaxial Layers Grown on Si(001) Substrates by Molecular Beam Epitaxy Assisted by Electron Cyclotron Resonance

Tokuo Yodo, H Tsuchiya, Hironori Ando et al. · Japanese Journal of Applied Physics · 2000 · 16 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

Influence of substrate nitridation before growth on initial growth process of GaN heteroepitaxial layers grown on Si(0 0 1) and Si(1 1 1) substrates by ECR-MBE

Tokuo Yodo, Hironori Ando, H Tsuchiya et al. · Journal of Crystal Growth · 2001 · 11 citations

Electrical Engineering, Engineering, Substrate Nitridation +8