Mitsuru Shimazu

Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and Arsine

Seishi Horiguchi, Kōzō Kimura, Koichi Kamon et al. · Japanese Journal of Applied Physics · 1986 · 54 citations

Materials Science, Semiconductors, Electrical Engineering +13

The pyrolysis temperature of triethylgallium in the presence of arsine of trimethylaluminum

Masao Mashita, Seishi Horiguchi, Mitsuru Shimazu et al. · Journal of Crystal Growth · 1986 · 48 citations

Materials Science, Chemical Engineering, Engineering +6

Orientation dependence of GaAs growth in low-pressure OMVPE

Koichi Kamon, Mitsuru Shimazu, Katsutoshi KIMURA et al. · Journal of Crystal Growth · 1987 · 47 citations

Gaas Growth, Compound Semiconductor, Applied Physics +1

Selective growth of AlxGa1−xAs embedded in etched grooves on GaAs by low-pressure OMVPE

Koichi Kamon, Mitsuru Shimazu, Katsutoshi KIMURA et al. · Journal of Crystal Growth · 1986 · 44 citations

Materials Engineering, Materials Science, Aluminium Nitride +8

Evaluation of AlN single-crystal grown by sublimation method

M. Miyanaga, Naho Mizuhara, Shinsuke Fujiwara et al. · Journal of Crystal Growth · 2007 · 39 citations

Materials Science, Materials Engineering, Aluminium Nitride +6