R. Badheka

Radiation damage in silicon (001) due to low energy (60–510 eV) argon ion bombardment

A. Al-Bayati, Kevin Orrman-Rossiter, R. Badheka et al. · Surface Science · 1990 · 57 citations

Ion Implantation, Physics, Applied Physics +5

Theoretical and experimental studies of the broadening of dilute delta‐doped Si spikes in GaAs during SIMS depth profiling

R. Badheka, M. Wadsworth, D.G. Armour et al. · Surface and Interface Analysis · 1990 · 43 citations

Semiconductor Technology, Semiconductor Device, Engineering +15

Reliability of the diffusion approximation for the ballistic relocation function in atomic mixing by ion beams

R. Collins, J.J. Jiménez-Rodrı́guez, M. Wadsworth et al. · Journal of Applied Physics · 1988 · 20 citations

Numerical Analysis, Engineering, Single Marker Layer +21

A model for atomic mixing

M. Wadsworth, D.G. Armour, R. Badheka et al. · International Journal of Numerical Modelling Electronic Networks Devices and Fields · 1990 · 18 citations

A Simulation Study of the Planar Electrostatic Ion Trap Mass Analyzer

Li Ding, R. Badheka, Zhengtao Ding et al. · Journal of the American Society for Mass Spectrometry · 2013 · 14 citations

Electrical Engineering, Fourier Transform, Engineering +12