Concepedia

E. Gouardes

EG

Statistics

Publications

7

Citations

243

H-Index

7

Active since

2000

Affiliations

Tokyo Institute of Technology(Current)

E. Gouardes is an author at Tokyo Institute of Technology specializing in engineering, applied physics, and physics.

Top concepts

EngineeringApplied PhysicsPhysicsPhotonicsOptoelectronicsLaser ControlSemiconductorsMaterial ScienceHigh-power LasersOptical Materials

Publications per year

2000–2010

7

Publications

7

Lasing Characteristics of Low-Threshold GaInNAs Lasers Grown by Metalorganic Chemical Vapor Deposition

Masao Kawaguchi, Tomoyuki Miyamoto, E. Gouardes et al. · Japanese Journal of Applied Physics · 2001 · 99 citations

Engineering, Laser Science, Laser Applications +18

Lasing Characteristics of 1.2 µm Highly Strained GaInAs/GaAs Quantum Well Lasers

Takashi Kondo, D. Schlenker, Tomoyuki Miyamoto et al. · Japanese Journal of Applied Physics · 2001 · 37 citations

Wide-bandgap Semiconductor, Photonics, Optical Materials +14

Low threshold current density operation of GaInNAsquantum well lasers grown by metalorganic chemical vapourdeposition

Masao Kawaguchi, E. Gouardes, D. Schlenker et al. · Electronics Letters · 2000 · 35 citations

Inclusion of Strain Effect in Miscibility Gap Calculations for III–V Semiconductors

D. Schlenker, Tomoyuki Miyamoto, Zhibiao Chen et al. · Japanese Journal of Applied Physics · 2000 · 24 citations

Semiconductors, Materials Science, Wide-bandgap Semiconductor +14

Critical layer thickness of 1.2-μm highly strained GaInAs/GaAs quantum wells

D. Schlenker, Tomoyuki Miyamoto, Z.B Chen et al. · Journal of Crystal Growth · 2000 · 20 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +7

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