Nan Fang - Concepedia

Author

Nan Fang

The University of Tokyo ORCID

Also Known As

Fang Nan, Fang, N., Fang, Nan, Jieyuan Li, N. Fang, Nan Fang, Yu‐Cheng Wang

Publications

1.1K

Citations

H-Index

Concepts

All Affiliations

The University of Tokyo East China Normal University Pioneer (Japan)RIKEN Center for Advanced Photonics National Institute for Materials Science

About

Nan Fang is an author at The University of Tokyo specializing in engineering, applied physics, and chemical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	720
2	Applied Physics	5	5	556
3	Chemical Engineering	5	5	164
4	Chemistry	5	5	164
5	Natural Sciences	1	1	24

Nan Fang

Publications

997

Citations

H-Index

Page 1

	Year	Citations
Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices Weisheng Li, Jian Zhou, Songhua Cai, Nature Electronics Semiconductor TechnologyElectrical EngineeringElectronic DevicesEngineeringElectronic Materials	2019	416
Low‐Coordinated Pd Site within Amorphous Palladium Selenide for Active, Selective, and Stable H<sub>2</sub>O<sub>2</sub> Electrosynthesis Zhiyong Yu, Shengyao Lv, Qing Yao, Advanced Materials	2022	64
TS-1 zeolite with homogeneous distribution of Ti atoms in the framework: synthesis, crystallization mechanism and its catalytic performance Zhen Chen, Lianlin Zhang, Yunkai Yu, Journal of Catalysis Materials ScienceInorganic ChemistryChemical EngineeringCatalytic MaterialEngineering	2021	61
Mesoporous CuCo2O4 rods modified glassy carbon electrode as a novel non-enzymatic amperometric electrochemical sensors with high-sensitive ascorbic acid recognition Xuechun Xiao, Zhanyu Zhang, Nan Fang, Journal of Alloys and Compounds Chemical EngineeringEngineeringMesoporous Cuco2o4 RodsGlassy Carbon ElectrodeElectroanalytical Sensor	2020	57
Accumulation-Mode Two-Dimensional Field-Effect Transistor: Operation Mechanism and Thickness Scaling Rule Nan Fang, Kosuke Nagashio ACS Applied Materials & Interfaces	2018	50
2D Tunnel Field Effect Transistors (FETs) with a Stable Charge‐Transfer‐Type p<sup>+</sup>‐WSe<sub>2</sub> Source Junyang He, Nan Fang, Keigo Nakamura, Advanced Electronic Materials Device ModelingOxide HeterostructuresElectrical EngineeringElectronic DevicesSemiconductors	2018	48
Band tail interface states and quantum capacitance in a monolayer molybdenum disulfide field-effect-transistor Nan Fang, Kosuke Nagashio Journal of Physics D Applied Physics Ii-vi SemiconductorElectrical EngineeringSemiconductor DeviceEngineeringPhysics	2018	45
Observation of metal-organic interphase in Cu-based electrochemical CO2-to-ethanol conversion Yan Shen, Nan Fang, Xinru Liu, Nature Communications	2025	34
Hexagonal Boron Nitride As an Ideal Substrate for Carbon Nanotube Photonics Nan Fang, Keigo Otsuka, Akihiro Ishii, ACS Photonics Optical MaterialsEngineeringCarbon Nanotube PhotonicsCubic Boron NitrideLuminescence Property	2020	33
Gripper-like Silicon Species for Efficient Synthesis of Crystalline Metallosilicates with Spatially Homogeneous Heteroatoms in the Framework Zhen Chen, Xuguang Liu, Yunkai Yu, Chemistry of Materials	2021	29

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