Response of 4H-SiC Detectors to Ionizing Particles

Robert Bernat, Ivana Capan, Luka Bakrač, +5

Crystals

Electrical EngineeringExperimental Nuclear PhysicsRadiation DetectionPhysicsIonizing Particles +13

Silicon carbide diodes for neutron detection

J. Coutinho, V. J. B. Torres, Ivana Capan, +11

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment

Electrical EngineeringEngineeringApplied PhysicsNeutron SourceInstrumentation +2

Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study

Ivana Capan, Tomislav Brodar, Željko Pastuović, +9

Journal of Applied Physics

EngineeringDft StudySemiconductor DeviceIi-vi SemiconductorNanoelectronics +14

Deep level defects in 4H-SiC introduced by ion implantation: the role of single ion regime

Željko Pastuović, Rainer Siegele, Ivana Capan, +3

Journal of Physics Condensed Matter

Influence of neutron radiation on majority and minority carrier traps in n-type 4H-SiC

Ivana Capan, Tomislav Brodar, Yuichi Yamazaki, +6

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms

Neutron RadiationMinority Carrier TrapsNuclear PhysicsPhysicsEngineering +6

Depth Profile Analysis of Deep Level Defects in 4H-SiC Introduced by Radiation

Tomislav Brodar, Luka Bakrač, Ivana Capan, +4

Crystals

Semiconductor TechnologyIon ImplantationEngineeringPhysicsRadiation Materials Science +10

M-center in 4H-SiC: Isothermal DLTS and first principles modeling studies

Ivana Capan, Tomislav Brodar, Robert Bernat, +5

Journal of Applied Physics

EngineeringBistable DefectDefect ToleranceIon ImplantationDeep Levels +16

<i>M</i> center in 4<i>H</i>-SiC is a carbon self-interstitial

J. Coutinho, José D. Gouveia, Takahiro Makino, +5

Physical review. B./Physical review. B

Minority Carrier Trap in n-Type 4H–SiC Schottky Barrier Diodes

Ivana Capan, Yuichi Yamazaki, Yuya Oki, +3

Crystals

Semiconductor TechnologyMinority Carrier TrapElectrical EngineeringCharge TrappingMinority Carrier Traps +6

M-Center in Neutron-Irradiated 4H-SiC

Ivana Capan, Tomislav Brodar, Takahiro Makino, +2

Crystals

Materials ScienceMaterials EngineeringIon ImplantationNuclear CeramicEngineering +11