R. Rentzsch

Electronic Correlation Effects and the Coulomb Gap at Finite Temperature

B. Sandow, K. Gloos, R. Rentzsch et al. · Physical Review Letters · 2001 · 45 citations · Full text

Quantum Science, Electrical Engineering, Electronic Correlation Effects +15

Variable‐Range Hopping in Neutron‐Transmutation‐Doped Gallium Arsenide

R. Rentzsch, K.‐J. Friedland, A. N. Ionov et al. · physica status solidi (b) · 1986 · 29 citations

Point defects in GaAs studied by correlated positron lifetime, optical, and electrical measurements

G. Dlubek, A. Dlubek, R. Krause et al. · physica status solidi (a) · 1988 · 18 citations

Optical Materials, Point Defects, Engineering +18

The Scaling Behaviour of the Metal-Insulator Transition of Isotopically Engineered Neutron-Transmutation Doped Germanium

R. Rentzsch, A. N. Ionov, Ch. Reich et al. · physica status solidi (b) · 1998 · 15 citations

Materials Science, Engineering, Physics +15

Orbital and spin effects in the low-temperature behavior of the magnetoresistance of doped CdTe crystals

N. V. Agrinskaya, V. I. Kozub, R. Rentzsch et al. · Journal of Experimental and Theoretical Physics · 1997 · 15 citations