Kazushi Kodama

Analysis and Improvement of Retention Time of Memorized State of Metal-Ferroelectric-Insulator-Semiconductor Structure for Ferroelectric Gate FET Memory

Minoru Takahashi, Hideki Sugiyama, Toshiyuki Nakaiso et al. · Japanese Journal of Applied Physics · 2001 · 60 citations

Non-volatile Memory, Longer Retention Time, Engineering +17

Improved Retention Characteristics of Metal-Ferroelectric-Insulator-Semiconductor Structure Using a Post-Oxygen-Annealing Treatment

Kazushi Kodama, Dan Ricinschi, Alexandru Ionut Lerescu et al. · Japanese Journal of Applied Physics · 2002 · 20 citations

Materials Engineering, Materials Science, Electrical Engineering +15

Basic characteristics of metal-ferroelectric-insulator-semiconductor structure using a high-k PrOx insulator layer

Minoru Noda, Kazushi Kodama, Satoshi Kitai et al. · Journal of Applied Physics · 2003 · 20 citations

Engineering, Metal-ferroelectric-insulator-semiconductor Structure, Silicon On Insulator +18

A Significant Improvement in Memory Retention of Metal-Ferroelectric-Insulator-Semiconductor Structure for One Transistor-Type Ferroelectric Memory by Rapid Thermal Annealing

Minoru Noda, Kazushi Kodama, Itaru Ikeuchi et al. · Japanese Journal of Applied Physics · 2003 · 12 citations

Engineering, Ferroelectric Random-access Memory, Transistor-type Ferroelectric Memory +18

Preparation and characterization of Bi4Ti3O12–SrBi4Ti4O15 ferroelectric thin films by pulsed laser deposition

Minoru Noda, Toshiyuki Nakaiso, Kentaro Takarabe et al. · Journal of Crystal Growth · 2002 · 10 citations

Materials Science, Materials Engineering, Multiferroics +8