G. Stareev

Statistics

Publications

Citations

151

H-Index

Active since

1993

Affiliations

Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute(Current)

G. Stareev is an author at Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute specializing in engineering, electronic materials, and semiconductor device materials.

Publications per year

1993–1994

Publications

A controllable mechanism of forming extremely low-resistance nonalloyed ohmic contacts to group III-V compound semiconductors

G. Stareev, H. Künzel, G. Dortmann · Journal of Applied Physics · 1993 · 65 citations

Engineering, Electrical Engineering, Physics +17

Formation of extremely low resistance Ti/Pt/Au ohmic contacts to p-GaAs

G. Stareev · Applied Physics Letters · 1993 · 42 citations

Engineering, Electrical Engineering, Materials Science +17

1.09-eV Schottky barrier height of nearly ideal Pt/Au contacts directly deposited on n- and p+n-Al0.48In0.52As layers

Alexander Fricke, G. Stareev, T. Kummetz et al. · Applied Physics Letters · 1994 · 28 citations

Engineering, Electrical Engineering, Materials Science +17

Tunneling behavior of extremely low resistance nonalloyed Ti/Pt/Au contacts to n(p)-InGaAs and n-InAs/InGaAs

G. Stareev, H. Künzel · Journal of Applied Physics · 1993 · 16 citations

Engineering, Materials Engineering, Materials Science +17

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