Statistics
Publications
1
Citations
29
H-Index
1
Active since
2024
Affiliations
HKUST Shenzhen Research Institute(Current)
He Tian is an author at HKUST Shenzhen Research Institute specializing in short-channel mobility degradation, semiconductor physics, and carrier mobility.
Publications per year
2024–2024
1
1
Steep Slope Field Effect Transistors Based on 2D Materials
Laixiang Qin, He Tian, Chunlai Li et al. · Advanced Electronic Materials · 2024 · 29 citations · Full text
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