Shinji Onga

Characterization of Polycrystalline Silicon MOS Transistors and Its Film Properties. I

Shinji Onga, Yoshihisa Mizutani, Kenji Taniguchi et al. · Japanese Journal of Applied Physics · 1982 · 35 citations

Materials Science, Semiconductor Technology, Electrical Engineering +13

A simplified box (buried-oxide) isolation technology for megabit dynamic memories

T. Shibata, Ryo Nakayama, K. Kurosawa et al. · 1983 · 31 citations

Non-volatile Memory, Engineering, Box Structure +16

Mobility Hump and Inversion Layer Subbands in Si on Sapphire

Shinji Kawaji, Katsunori Hatanaka, Koichi Nakamura et al. · Journal of the Physical Society of Japan · 1976 · 17 citations

Engineering, Silicon On Insulator, Semiconductor Device +16

Influence of Crystalline Defects and Residual Stress on the Electrical Characteristics of SOS MOS Devices

Shinji Onga, Katsunori Hatanaka, Shinji Kawaji et al. · Japanese Journal of Applied Physics · 1978 · 13 citations

Engineering, Carrier Mobility, Drain Leakage +17

Heat Capacity and Magnetic Phase Transition in CeBi

Takashi Tsuchida, Shinji Onga, Tetsuo Kawai et al. · Journal of the Physical Society of Japan · 1973 · 13 citations

Magnetism, Engineering, Physics +7