Hirokatsu Umegami

A Novel High-Efficiency Gate Drive Circuit for Normally Off-Type GaN FET

Hirokatsu Umegami, Fumiya Hattori, Yu Nozaki et al. · IEEE Transactions on Industry Applications · 2013 · 36 citations

Electrical Engineering, Engineering, Power Device +10

An analysis of false turn-on mechanism on high-frequency power devices

H. Ishibashi, Akihiro Nishigaki, Hirokatsu Umegami et al. · 2015 · 32 citations

Wide-bandgap Semiconductor, Engineering, High-frequency Power Devices +16

An analysis of false turn-on mechanism on power devices

Akihiro Nishigaki, Hirokatsu Umegami, Fumiya Hattori et al. · 2014 · 32 citations

Electrical Engineering, Gate Noise Performance, Engineering +15

Basic analysis of false turn‐on phenomenon of power semiconductor devices with parasitic inductances

Hirokatsu Umegami, H. Ishibashi, Kimihiro Nanamori et al. · Electronics Letters · 2016 · 18 citations

Electrical Engineering, Semiconductor Device, Engineering +15

Multi‐resonant gate drive circuit of isolating‐gate GaN HEMTs for tens of MHz

Fumiya Hattori, Hirokatsu Umegami, Masayoshi Yamamoto · IET Circuits Devices & Systems · 2016 · 17 citations