Haohao Xu

The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes

Shengjun Zhou, Xingtong Liu, Han Yan et al. · Scientific Reports · 2018 · 107 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

High quality GaN buffer layer by isoelectronic doping and its application to 365 nm InGaN/AlGaN ultraviolet light-emitting diodes

Shengjun Zhou, Haohao Xu, Hongpo Hu et al. · Applied Surface Science · 2018 · 80 citations

Engineering, Materials Engineering, Materials Science +16

Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer

Hongpo Hu, Shengjun Zhou, Hui Wan et al. · Scientific Reports · 2019 · 73 citations · Full text

Engineering, Materials Engineering, Materials Science +17

High-power and reliable GaN-based vertical light-emitting diodes on 4-inch silicon substrate

Shengjun Zhou, Haohao Xu, Bin Tang et al. · Optics Express · 2019 · 31 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

High-efficiency GaN-based LED with patterned SiO2 current blocking layer deposited on patterned ITO

Shengjun Zhou, Mengling Liu, Haohao Xu et al. · Optics & Laser Technology · 2018 · 19 citations · Full text

Engineering, Electrical Engineering, Materials Science +14