Danshuo Liu

Vacancy-engineering-induced dislocation inclination in III-nitrides on Si substrates

Jie Zhang, Xuelin Yang, Yuxia Feng et al. · Physical Review Materials · 2020 · 37 citations

Natural Sciences, Materials Science, Physics +17

Al diffusion at AlN/Si interface and its suppression through substrate nitridation

Lai Wei, Xuelin Yang, Jianfei Shen et al. · Applied Physics Letters · 2020 · 34 citations

Engineering, Electrical Engineering, Materials Science +17

High quality GaN-on-SiC with low thermal boundary resistance by employing an ultrathin AlGaN buffer layer

Yuxia Feng, Huarui Sun, Xuelin Yang et al. · Applied Physics Letters · 2021 · 27 citations

Engineering, Materials Engineering, Materials Science +17

High quality AlN film grown on a nano-concave-circle patterned Si substrate with an AlN seed layer

Jianfei Shen, Xuelin Yang, Danshuo Liu et al. · Applied Physics Letters · 2020 · 21 citations

Natural Sciences, Materials Engineering, Materials Science +17

High-mobility n−-GaN drift layer grown on Si substrates

Jianfei Shen, Xuelin Yang, Huayang Huang et al. · Applied Physics Letters · 2021 · 12 citations

Engineering, Materials Engineering, Materials Science +17