I. N. Arsentyev

Experimental study of structural and optical properties of integrated MOCVD GaAs/Si(001) heterostructures

A. S. Lenshin, D. S. Zolotukhin, I. N. Arsentyev et al. · Physica B Condensed Matter · 2017 · 35 citations

Ii-vi Semiconductor, Electrical Engineering, Optical Materials +8

Distinctions of the growth and structural-spectroscopic investigations of thin AlN films grown on the GaAs substrates

I. N. Arsentyev, A. D. Bondarev, I. S. Tarasov · Physica B Condensed Matter · 2016 · 32 citations

Materials Science, Aluminium Nitride, Epitaxial Growth +11

Impact of the substrate misorientation and its preliminary etching on the structural and optical properties of integrated GaAs/Si MOCVD heterostructures

A. S. Lenshin, D. S. Zolotukhin, I. N. Arsentyev et al. · Physica E Low-dimensional Systems and Nanostructures · 2017 · 30 citations

Electrical Engineering, Optical Materials, Engineering +9

Structural and optical investigations of AlxGa1−xAs:Si/GaAs(100) MOCVD heterostructures

É. P. Domashevskaya, I. N. Arsentyev, D. A. Vinokurov et al. · Physica B Condensed Matter · 2010 · 29 citations

Ii-vi Semiconductor, Optical Materials, Engineering +3

Raman investigation of low temperature AlGaAs/GaAs(100) heterostructures

É. P. Domashevskaya, I. N. Arsentyev, D. A. Vinokurov et al. · Physica B Condensed Matter · 2010 · 29 citations

Aluminium Nitride, Engineering, Applied Physics +2