Lawrence F. Schloss

Oxide dual-layer memory element for scalable non-volatile cross-point memory technology

R. Meyer, Lawrence F. Schloss, Julie Brewer et al. · 2008 · 107 citations

Non-volatile Memory, Electrical Engineering, Engineering +13

Thermal annealing characteristics of Si and Mg-implanted GaN thin films

J. Chan, N.W. Cheung, Lawrence F. Schloss et al. · Applied Physics Letters · 1996 · 45 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +10

Structural Defects in Heteroepitaxial and Homoepitaxial GaN

Z. Liliental‐Weber, S. Ruvimov, C. Kisielowski et al. · MRS Proceedings · 1995 · 42 citations

Applied Physics, Structural Defects, Physics +1

Thickness-dependent phase evolution of polycrystalline Pb(Zr0.35Ti0.65)O3 thin films

Maxim B. Kelman, Lawrence F. Schloss, Paul C. McIntyre et al. · Applied Physics Letters · 2002 · 41 citations · Full text

Materials Science, Materials Engineering, Material Analysis +13

Oxygen tracer studies of ferroelectric fatigue in Pb(Zr,Ti)O3 thin films

Lawrence F. Schloss, Paul C. McIntyre, B. C. Hendrix et al. · Applied Physics Letters · 2002 · 20 citations

Materials Science, Materials Engineering, Electrical Engineering +13