21:I[432972,["/_next/static/chunks/bb923814e1f4d2e9.js","/_next/static/chunks/dd3ee9f5b7716ca6.js","/_next/static/chunks/4204a0ae82542ca8.js","/_next/static/chunks/1270dead247da766.js","/_next/static/chunks/6e1aa89a642f40be.js","/_next/static/chunks/2d7aa753e81324a8.js","/_next/static/chunks/8ffd0b71567920d8.js","/_next/static/chunks/67ea6dfd21f16c5f.js","/_next/static/chunks/24eb4379f68013fd.js","/_next/static/chunks/b8cd775ffdf935bd.js","/_next/static/chunks/983103cd9eb7b428.js","/_next/static/chunks/263f2cdcb9aa2341.js","/_next/static/chunks/294b9525248c8e5f.js"],"default"] 22:T434,Over the past few decades, the diversified development of antiferromagnetic spintronics has made antiferromagnets (AFMs) interesting and very useful. After tough challenges, the applications of AFMs in electronic devices have transitioned from focusing on the interface coupling features to achieving the manipulation and detection of AFMs. As AFMs are internally magnetic, taking full use of AFMs for information storage has been the main target of research. In this paper, we provide a comprehensive description of AFM spintronics applications from the interface coupling, read-out operations, and writing manipulations perspective. We examine the early use of AFMs in magnetic recordings and conventional magnetoresistive random-access memory (MRAM), and review the latest mechanisms of the manipulation and detection of AFMs. Finally, based on exchange bias (EB) manipulation, a high-performance EB-MRAM is introduced as the next generation of AFM-based memories, which provides an effective method for read-out and writing of AFMs and opens a new era for AFM spintronics.23:T4ad,Spin-orbit-torque (SOT)-driven perpendicular magnetization switching has attracted great attention for designing energy-efficient, high-density, and thermal-stable storage devices. As field-free deterministic switching of perpendicular magnetization is not allowed in conventional heavy metals or topological insulators where spin polarization is limited to the in-plane direction, transition metal dichalcogenides (TMDs) emerge as current spin platforms due to their low-crystal symmetries. However, present studies using TMDs are restricted to mechanically exfoliated samples with micron sizes and to low-temperature operation, which impede their practical applications. Here, based on large-scale, chemical vapor deposition (CVD)-grown, few-layer WTe2 thin films, the field-free switching at room temperature of the CoFeB/MgO heterostructure with perpendicular magnetic anisotropy is experimentally realized owing to unconventional SOTs in WTe2. Furthermore, we employ micromagnetic simulations to explore magnetization dynamics in the out-of-plane polarized spin’s presence. This work paves the way for constructing all-electrical, low-power spintronic devices based on two-dimensional TMDs.24:T47d,Spin-orbit torque magnetic random access memory (SOT-MRAM) has great promise in high write speed and low power consumption. Mo can play a vital role in constructing a CoFeB/MgO-based MRAM cell because of its ability to enhance the perpendicular magnetic anisotropy (PMA), thermal tolerance, and tunneling magnetoresistance. However, Mo is often considered as a less favorable candidate among SOT materials because of its weak spin-orbit coupling. In this study, we experimentally investigate the SOT efficiencies in Mo/CoFeB/MgO heterostructures over a wide range of Mo thicknesses and temperature. Decent damping-like SOT efficiency |ξ_DL| = 0.015 ± 0.001 and field-like SOT efficiency |ξ_FL| = 0.050 ± 0.001 are found in amorphous Mo. The ξ_FL/ξ_DL ratio is greater than 3. Furthermore, efficient current-induced magnetization switching is demonstrated with the critical current density comparable with heavy metal Ir and W. Our work reveals new understanding and possibilities for Mo as both an SOT source component and PMA buffer layer in the implementation of SOT-MRAMs.25:T851,

#	Concept	H-Index	Publications	Citations
1	Engineering	2	2	147
2	Social Sciences	2	2	40
3	Applied Physics	2	2	147
4	Medicine	1	1	27
5	Natural Sciences	1	1	134

	Year	Citations

About

Top Concepts