Özcan Birgi

The analysis of the charge transport mechanism of n-Si/MEH-PPV device structure using forward bias I–V–T characteristics

A. Sertap Kavasoğlu, F. Yakuphanoğlu, Neşe Kavasoğlu et al. · Journal of Alloys and Compounds · 2009 · 39 citations

Semiconductor Technology, Electrical Engineering, Charge Transport Mechanism +8

Room-temperature interface state analysis of Au/Poly(4-vinyl phenol)/p-Si structure

Neşe Kavasoğlu, Cem Tozlu, Osman Pakma et al. · Synthetic Metals · 2009 · 31 citations

Materials Science, Material Analysis, Engineering +4

Negative capacitance peculiarities in a-Si:H/c-Si rectifier structure

A. Sertap Kavasoğlu, Neşe Kavasoğlu, Alp Osman Kodolbaş et al. · Microelectronic Engineering · 2009 · 15 citations

Electrical Engineering, Semiconductor Device Fabrication, Silicon On Insulator +2

Investigation of temperature dependent dc current transport mechanism on Au/poly(4-vinyl phenol)/p-Si device

A. Sertap Kavasoğlu, Cem Tozlu, Osman Pakma et al. · Journal of Physics D Applied Physics · 2009 · 13 citations

Engineering, Charge Transport, Semiconductors +17

Electrical characterization of a-Si:H(n)/c-Si(p) structure

A. Sertap Kavasoğlu, Özcan Birgi, Neşe Kavasoğlu et al. · Journal of Alloys and Compounds · 2011 · 10 citations

Electrical Engineering, Engineering, Applied Physics +5