D. L. Camphausen

Calculation of Energy-Band Pressure Coefficients from the Dielectric Theory of the Chemical Bond

D. L. Camphausen, G. A. N. Connell, William Paul · Physical Review Letters · 1971 · 319 citations

Materials Science, Engineering, Physics +13

Theory of Poole-Frenkel conduction in low-mobility semiconductors

G. A. N. Connell, D. L. Camphausen, William Paul · Philosophical magazine · 1972 · 94 citations

Semiconductors, New Expression, Electrical Engineering +12

Pressure and Temperature Dependence of the Absorption Edge in GaN

D. L. Camphausen, G. A. N. Connell · Journal of Applied Physics · 1971 · 57 citations

Wide-bandgap Semiconductor, Engineering, Semiconductors +16

Influence of Hydrostatic Pressure and Temperature on the Deep Donor Levels of Sulfur in Silicon

D. L. Camphausen, Howard James, R. J. Sladek · Physical review. B, Solid state · 1970 · 39 citations

Materials Science, Materials Engineering, Hydrostatic Pressure +13

High temperature Fe3O4 - a polaronic semiconductor?

D. L. Camphausen · Solid State Communications · 1972 · 25 citations

High Temperature Fe3o4, Engineering, Physics +5