M.‐Y. Xie

Effects of strain and composition on the lattice parameters and applicability of Vegard’s rule in Al-rich Al1−xInxN films grown on sapphire

Vanya Darakchieva, Markus Beckers, M.‐Y. Xie et al. · Journal of Applied Physics · 2008 · 59 citations · Full text

Aluminium Nitride, Engineering, Crystal Growth Technology +17

Lattice parameters, deviations from Vegard’s rule, and E2 phonons in InAlN

Vanya Darakchieva, M.‐Y. Xie, Ferenc Tasnádi et al. · Applied Physics Letters · 2008 · 47 citations

Engineering, Spectroscopic Property, Quantum Materials +18

Epitaxial lateral overgrowth of InP on Si from nano-openings: Theoretical and experimental indication for defect filtering throughout the grown layer

Fredrik Olsson, M.‐Y. Xie, S. Lourdudoss et al. · Journal of Applied Physics · 2008 · 45 citations · Full text

Engineering, Seed Window, Grown Layer +17

Structural anisotropy of nonpolar and semipolar InN epitaxial layers

Vanya Darakchieva, M.‐Y. Xie, N. Franco et al. · Journal of Applied Physics · 2010 · 23 citations · Full text

Engineering, Crystal Growth Technology, Thin Film Process Technology +16

Effect of Mg doping on the structural and free-charge carrier properties of InN films

M.‐Y. Xie, N. Ben Sédrine, S. Schöche et al. · Journal of Applied Physics · 2014 · 18 citations · Full text

Materials Science, Materials Engineering, Semiconductors +14