Evan A. Clinton

Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN

Brendan Gunning, Chloe A. M. Fabien, Joseph J. Merola et al. · Journal of Applied Physics · 2015 · 57 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Comprehensive Analysis of Metal Modulated Epitaxial GaN

Habib Ahmad, Keisuke Motoki, Evan A. Clinton et al. · ACS Applied Materials & Interfaces · 2020 · 32 citations

Engineering, Materials Engineering, Materials Science +17

Negative differential resistance in GaN homojunction tunnel diodes and low voltage loss tunnel contacts

Evan A. Clinton, Ehsan Vadiee, Shyh‐Chiang Shen et al. · Applied Physics Letters · 2018 · 29 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Control of ion content and nitrogen species using a mixed chemistry plasma for GaN grown at extremely high growth rates &amp;gt;9 <i>μ</i>m/h by plasma-assisted molecular beam epitaxy

Brendan Gunning, Evan A. Clinton, Joseph J. Merola et al. · Journal of Applied Physics · 2015 · 28 citations · Full text

Natural Sciences, Materials Science, Physics +14

Ultra-wide-bandgap AlGaN homojunction tunnel diodes with negative differential resistance

Evan A. Clinton, Zachary Engel, Ehsan Vadiee et al. · Applied Physics Letters · 2019 · 28 citations · Full text

Engineering, Electrical Engineering, Materials Science +17