P. Krispin

Statistics

Publications

Citations

756

H-Index

Active since

1964

Affiliations

Paul Drude Institute for Solid State Electronics(Current)

Stanford University

Ferdinand-Braun-Institut

P. Krispin is an author at Paul Drude Institute for Solid State Electronics specializing in materials science, semiconductor materials, and electronic materials.

Publications per year

1964–2004

Publications

Incorporation of nitrogen in nitride-arsenides: Origin of improved luminescence efficiency after anneal

S.G. Spruytte, C.W. Coldren, James S. Harris et al. · Journal of Applied Physics · 2001 · 263 citations

Natural Sciences, Materials Engineering, Materials Science +17

Nitrogen-related electron traps in Ga(As,N) layers (⩽3% N)

P. Krispin, Vincent Gambin, J. S. Harris et al. · Journal of Applied Physics · 2003 · 87 citations

Engineering, Materials Science, Physics +17

Electrical depth profile of <i>p</i>-type GaAs/Ga(As, N)/GaAs heterostructures determined by capacitance–voltage measurements

P. Krispin, S.G. Spruytte, J. S. Harris et al. · Journal of Applied Physics · 2000 · 62 citations

Engineering, Electrical Engineering, Materials Science +17

Nitrogen related deep electron trap in GaP

G. Ferenczi, P. Krispin, M. Somogyi · Journal of Applied Physics · 1983 · 58 citations

Natural Sciences, Materials Science, Electronic Materials +14

Origin and annealing of deep-level defects in <i>p</i>-type GaAs/Ga(As,N)/GaAs heterostructures grown by molecular beam epitaxy

P. Krispin, S.G. Spruytte, J. S. Harris et al. · Journal of Applied Physics · 2001 · 42 citations

Engineering, Materials Engineering, Materials Science +17

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