L. A. Balagurov - Concepedia

Author

L. A. Balagurov

Ural Institute of Metals

Also Known As

L A Balagurov, L. A. BALAGUROV, L. A. Balagurov, L. Balagurov, L.A Balagurov, L.A. Balagurov, Leonid A. Balagurov

Publications

473

Citations

H-Index

Concepts

All Affiliations

Ural Institute of Metals Lomonosov Moscow State University De Montfort University Queen Mary University of London

About

L. A. Balagurov is an author at Ural Institute of Metals specializing in engineering, applied physics, and surface science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	12	366
2	Applied Physics	10	10	286
3	Electrical Engineering	5	5	141
4	Chemical Engineering	3	3	143
5	Chemistry	1	1	28

L. A. Balagurov

Publications

408

Citations

H-Index

Page 1

	Year	Citations
Room temperature oxidation of porous silicon in air K.N Bogoslovskaya, L. A. Balagurov, G.I Kochoradze Materials Science and Engineering B Materials ScienceChemical EngineeringEngineeringRoom Temperature OxidationOxidation Resistance	2000	61
Electronic transport in porous silicon of low porosity made on a p+ substrate L. A. Balagurov, D. G. Yarkin Materials Science and Engineering B P+ SubstrateChemical EngineeringEngineeringNanoporous MaterialSurface Science	2000	54
Highly sensitive porous silicon based photodiode structures L. A. Balagurov, D. G. Yarkin, G. A. Petrovicheva, Journal of Applied Physics Semiconductor TechnologyElectrical EngineeringPhotoelectric SensorEngineeringImage Sensor	1997	45
Study of deep level defects in <i>n</i>-GaN by the optical transmission method L. A. Balagurov, Paul Joe Chong Applied Physics Letters Wide-bandgap SemiconductorOptical MaterialsEngineeringAbsorption Coefficient SpectraPhoton Energy	1996	41
Electrical properties of metal/porous silicon/p-Si structures with thin porous silicon layer L. A. Balagurov, S. C. Bayliss, A. F. Orlov, Journal of Applied Physics EngineeringSemiconductor MaterialsIntegrated CircuitsSilicon On InsulatorMetal/porous Silicon/p-si Structures	2001	34
Influence of water and alcohols on photoluminescence of porous silicon L. A. Balagurov, B.M. Leiferov, A. F. Orlov, Journal of Applied Physics Optical MaterialsEngineeringNanoporous MaterialOptoelectronic DevicesChemistry	1996	28
Transport of carriers in metal/porous silicon/<i>c</i>-Si device structures based on oxidized porous silicon L. A. Balagurov, S. C. Bayliss, V.S Kasatochkin, Journal of Applied Physics Materials ScienceSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceHigh Conductivity	2001	27
Metal/PS/c-Si photodetectors based on unoxidized and oxidized porous silicon L. A. Balagurov, S. C. Bayliss, S.Ya Andrushin, Solid-State Electronics Electrical EngineeringEngineeringPhotonic Integrated CircuitSilicon On InsulatorOptoelectronics	2001	19
Effects of vacuum annealing on the optical properties of porous silicon L. A. Balagurov, D. G. Yarkin, A. F. Orlov, Applied Physics Letters Optical MaterialsEngineeringOptoelectronic DevicesIntegrated CircuitsVacuum Device	1996	17
Charge carrier transport in thermally oxidized metal/PS/p-Si and metal/PS/n-Si structures D. G. Yarkin, L. A. Balagurov, S. C. Bayliss, Semiconductor Science and Technology Materials ScienceMaterials EngineeringElectrical EngineeringElectronic DevicesEngineering	2003	16

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