2.33 µm-wavelength InAs/InGaAs multiple-quantum-well lasers grown by MOVPE

Abstract

An emission wavelength of 2.33 µm in an InAs/InGaAs multiplequantum-well laser grown by metal-organic vapour phase epitaxy is reported. The laser had an output power above 10 mW under continuous-wave operation at temperatures between 15 and 45°C. High-temperature operation up to 50°C and a characteristic temperature of 51 K were also confirmed.