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Characterization of electrochemically deposited thin Mo-O-C-Se film layers
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2010
Year
Unknown Venue
Materials ScienceOxide HeterostructuresFourier TransformOptical MaterialsEngineeringElectronic MaterialsBang Gap EnergyOxide ElectronicsSurface ScienceOxide SemiconductorsApplied PhysicsSpectral AnalysisSemiconductor MaterialThin Film Process TechnologyThin FilmsThin Film ProcessingElectrochemistryElectrochemical Surface Science
The paper reports on the composition, morphology and optical properties of thin Mo–O–C–Se film electrodeposited onto SnO2–glass substrate (R = 292 Ω/cm). The composition of films was estimated based on X-ray photoelectron spectroscopy and Fourier transform infrared spectral analysis. Structural elements similar to molybdenum oxides and/or hydroxides, MoSe2, Se and SeO2 were identified on the surface and in the bulk of the electrodeposits. The studies of surface morphology by scanning electron microscopy and atomic force microscopy showed long-sized wires distributed over all the surface. The optical absorption studies revealed the films to be highly absorptive (10α cm) with a direct band transition and the bang gap energy of 1.75 eV.
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