Electronics Letters · 2015 · 136 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesHigh-frequency Semiconductor DevicesOptical Communication SystemsOptical InterconnectsOxide SemiconductorsSemiconductor Device MaterialsSemiconductor LasersCurrentsHigh-speed TransmissionIntegrated LasersIntegrated Semiconductor LasersInterconnect Energy EfficiencyModulation BandwidthVertical-cavity Surface-emitting Lasers
A high‐speed and energy‐efficient oxide‐confined 850 nm vertical‐cavity surface‐emitting laser (VCSEL) for optical interconnects is presented. A record‐high modulation bandwidth of 30 GHz is reached for a 3.5 µm oxide aperture VCSEL, with 25 GHz bandwidth already at a bias current of 1.8 mA. The high bandwidth at low currents enables energy‐efficient transmission with a dissipated heat energy in the VCSEL of <100 fJ/bit at 25, 40 and 50 Gbit/s.
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High‐speed 850 nm VCSELs operating error free up to 57 Gbit/s
Petter Westbergh, Emanuel P. Haglund, Emanuel P. Haglund et al. · Electronics Letters · 2013 · 143 citations · Full text
Petter Westbergh, Rashid Safaisini, Erik Haglund et al. · IEEE Photonics Technology Letters · 2013 · 114 citations