Epitaxial growth of metallic ErP, ErSb and lattice-matched ErP _x Sb _1−x layers on (001)InP and (001)GaAs

Abstract

ErP and ErSb compounds have been demonstrated to have metallic behaviour (ρErP = 150 µΩcm; ρErSb = 60 µΩcm). We show that they can be epitaxially grown on InP and GaAs in an MBE system and that many matched systems (metallic layer)/(III-V semiconductor) can be built using ternary compounds of rare-earth and V elements.