Fabrication of C60 field-effect transistors with polyimide and Ba0.4Sr0.6Ti0.96O3 gate insulators

Abstract

A flexible C60 field-effect transistor (FET) device has been fabricated with a polyimide gate insulator on the poly(ethylene terephthalate) substrate, and n-channel normally off FET properties are observed in this FET device. The field-effect mobility, μ, is estimated to be ∼10−2cm2V−1s−1 at 300K. Furthermore, the C60 FET has been fabricated with a high-dielectric Ba0.4Sr0.6Ti0.96O3 (BST) gate insulator, showing n-channel properties; the μ value is estimated to be ∼10−4cm2V−1s−1 at 300K. The FET device operates at very low gate voltage, VG, and low drain-source voltage, VDS. Thus these C60 FET devices possess flexibility and low-voltage operation characteristic of polyimide and BST gate insulators, respectively.