High-power singlemode CW operation of 1.5 µm-range quantum dot GaAs-based laser

Abstract

Narrow ridge stripe lasers with metamorphic InAs/InGaAs quantum dots grown using molecular beam epitaxy on GaAs substrates emit in the 1.5 µm wavelength range demonstrating a differential quantum efficiency of about 50%, singlemode operation, and maximum continuous-wave power of 220 mW limited by thermal roll-over. Absence of beam filamentation is demonstrated up to the highest power levels studied.