Applied Physics Letters · 2004 · 236 citations · 11 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsOptoelectronicsPhotonicsHigh-frequency Semiconductor DevicesLaser DiodesLaser PhysicsSemiconductor LasersTerahertz PhotonicsTerahertz SpectroscopyContinuous-wave LasersCurrent DensityDifferential ResistanceQuantum Cascade LasersTemperature DependenceTerahertz GenerationTerahertz Quantum Cascade LasersThreshold Behavior
We report the operation of a quantum cascade laser emitting at a 103μm wavelength (2.9THz). The active region is based on a bound-to-continuum design allowing a low parasitic leakage current, and a high upper-to-lower-state lifetime ratio. The latter is demonstrated by a pronounced decrease of the differential resistance at threshold, which is visible up to high temperatures, and by a weak temperature dependence of the slope efficiency. At 4K, we report a threshold current density of only 105A∕cm2 both in pulsed and continuous-wave operation, and an emitted peak power of 15mW independent of the duty cycle. Maximum operating temperatures of 95K and 70K are observed in pulsed and continuous wave modes, respectively.
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Terahertz semiconductor-heterostructure laser
Rüdeger Köhler, Alessandro Tredicucci, Fabio Beltram et al. · Nature · 2002 · 2.7K citations
Resonant tunneling in quantum cascade lasers
Carlo Sirtori, Federico Capasso, Jérôme Faist et al. · IEEE Journal of Quantum Electronics · 1998 · 270 citations
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