Publication | Open Access
ANN Model For SiGe HBTs Constructed From Time-Domain Large-Signal Measurements
11
Citations
11
References
2002
Year
Unknown Venue
EngineeringElectromagnetic CompatibilityRf SemiconductorPhysic Aware Machine LearningElectronic EngineeringModeling And SimulationComputational ElectromagneticsDevice ModelingElectrical EngineeringPhysicsHigh-frequency DeviceBias Temperature InstabilityComputer EngineeringSige HbtsSelf-heating EffectMicroelectronicsAnn ModelComputational NeuroscienceNatural SciencesParticle PhysicsModel Accuracy
We construct a large-signal artificial neural network (ANN) model for SiGe HBTs, directly from time-domain large-signal measurements. It is known that HBTs are very sensitive to self-heating and therefore we explicitly study the effect on the model accuracy of the incorporation of the self-heating effect in the behavioural model description. Finally, we show that this type of models can be accurate at extreme operating conditions, where classical compact models start to fail.
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