f^-αnoise in NbSe₃

Abstract

The authors have measured the voltage noise of NbSe3 samples in the nonlinear state as a function of frequency for temperatures below the lower charge density wave formation temperature. They find that over broad conditions of electric fields and temperatures the noise power spectrum follows a f- alpha dependence with alpha approximately 0.8. They interpret the broad-band noise as due either to the mixing of radiofrequency fields radiated by the domains which form the charge density wave lattice, or alternatively to the dynamics of kinks-antikinks along the chains.