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Evaluation of growth mode and optimization of growth parameters for GaAs epitaxy in V-shaped trenches on Si

Electrical EngineeringEpitaxial GrowthEngineeringSemiconductor DeviceNanoelectronicsApplied PhysicsGrowth ModeGaas EpitaxyMolecular Beam EpitaxyMicroelectronicsOptoelectronicsCompound SemiconductorV-shaped Trenches