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2H-silicon carbide epitaxial growth on c-plane sapphire substrate using an AlN buffer layer and effects of surface pre-treatments

Materials ScienceMaterials EngineeringEpitaxial GrowthEngineeringAln Buffer LayerSurface ScienceApplied PhysicsSurface Pre-treatmentsC-plane Sapphire SubstrateMolecular Beam EpitaxyMicroelectronicsCarbide