Developing HZO‐Based Superlattices to Enhance Fatigue‐Resistance by Charge Injection Suppression

Abstract

Abstract The HfO 2 ‐based ferroelectric thin films exhibit strong scalability and compatibility with complementary metal‐oxide‐semiconductor technology, rapidly promoting the development of ferroelectric memories. However, the inevitable breakdown‐associated fatigue failure caused by charge injection poses a serious limitation on high‐reliable HfO 2 ‐based ferroelectric memories. By constructing an HZO‐ZrO 2 ferroelectric superlattice to achieve fast switching and a low depolarization field, both the duration and intensity of charge injection are reduced during polarization switching. Thus, the charge injection effect during polarization switching is effectively suppressed, resulting in the enhanced endurance of over 10 12 cycles. Furthermore, the semi‐quantitative calculation method is constructed to evaluate the influence of charge injection on endurance performance. This work provides a strategy and perspective to achieve fatigue‐resistance HfO 2 ‐based ferroelectric memories.