Synthesis and Reliable Functional Applications of SiC Nanomaterials under Harsh Environments

Abstract

Abstract Advanced technology sectors including aerospace, deep‐sea exploration and electronics increasingly demand materials that maintain stable performance under extreme temperature and humidity, reactive chemical environments, high‐voltage and high‐power conditions. Silicon carbide (SiC) is widely recognized for its exceptional electronic properties and remarkable physicochemical stability, enabling it to assemble functional devices capable of withstanding complex and harsh environments. Durable devices based on SiC are extensively studied and achieved significant progress in fields such as energy, catalysis, sensing and power devices in recent years, demonstrating promising prospects for future development. In this review, advanced synthesis methods for high‐quality SiC nanomaterials are first discussed. Then the progress on the functional applications of SiC under extreme conditions are summarized. Additionally, the challenges and prospects of SiC on synthesis and operation in harsh environments are outlined.