Self-Powered Photodetectors Based on Ta₂NiSe₅/p-GaN Heterostructures for UV Imaging Applications

Abstract

Self-powered ultraviolet (UV) photodetectors, which have wide application prospects in optoelectronic fields, have gained great interest in recent years due to their high sensitivity and low power consumption. In this work, a UV photodetector based on a Ta2NiSe5/p-GaN mixed-dimensional van der Waals heterostructure is fabricated. Owing to its type-I band gap alignment, the fabricated Ta2NiSe5/p-GaN heterostructure has demonstrated low dark current and rapid response time under 355 nm illumination. Taking advantage of an excellent built-in electrical potential, the device shows impressive photovoltaic properties and can work without an external power supply. Furthermore, the photodetector showed its capabilities in UV imaging. The results are expected to create opportunities for developing high-performance self-powered UV photodetectors.