Microsystems & Nanoengineering · 2025 · 37 citations · 33 references
EngineeringElectrical EngineeringPhysicsElectronic MaterialsMicrowave EngineeringWireless CommunicationsHigh-frequency Semiconductor DevicesMicrowave FiltersMicrowave MaterialsMicrowave ResonatorsMillimeter-wave CommunicationsPeriodic Electromagnetic StructuresAcoustic Wave FiltersAluminum NitrideBulk Mode ResonatorsElectromechanical CouplingElectromechanical Coupling CoefficientFiltersResonator CouplingResonator Design
Abstract Bulk Acoustic Wave (BAW) filters find applications in radio frequency (RF) communication systems for Wi-Fi, 3G, 4G, and 5G networks. In the beyond-5G (potential 6G) era, high-frequency bands (>8 GHz) are expected to require resonators with high-quality factor ( Q ) and electromechanical coupling ( $${k}_{t}^{2}$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msubsup> <mml:mrow> <mml:mi>k</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>t</mml:mi> </mml:mrow> <mml:mrow> <mml:mn>2</mml:mn> </mml:mrow> </mml:msubsup> </mml:math> ) to form filters with low insertion loss and high selectivity. However, both the Q and $${k}_{t}^{2}$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msubsup> <mml:mrow> <mml:mi>k</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>t</mml:mi> </mml:mrow> <mml:mrow> <mml:mn>2</mml:mn> </mml:mrow> </mml:msubsup> </mml:math> of resonator devices formed in traditional uniform polarization piezoelectric films of aluminum nitride (AlN) and aluminum scandium nitride (AlScN) decrease when scaled beyond 8 GHz. In this work, we utilized 4-layer AlScN periodically poled piezoelectric films (P3F) to construct high-frequency (~17–18 GHz) resonators and filters. The resonator performance is studied over a range of device geometries, with the best resonator achieving a $${k}_{t}^{2}$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msubsup> <mml:mrow> <mml:mi>k</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>t</mml:mi> </mml:mrow> <mml:mrow> <mml:mn>2</mml:mn> </mml:mrow> </mml:msubsup> </mml:math> of 11.8% and a $${Q}_{{\rm {p}}}$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msub> <mml:mrow> <mml:mi>Q</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>p</mml:mi> </mml:mrow> </mml:msub> </mml:math> of 236.6 at the parallel resonance frequency ( $${f}_{{\rm {p}}}$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msub> <mml:mrow> <mml:mi>f</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>p</mml:mi> </mml:mrow> </mml:msub> </mml:math> ) of 17.9 GHz. These resulting figures-of-merit are ( $${{{\rm {FoM}}}}_{1}={{k}_{t}^{2}Q}_{{\rm {p}}}$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:msub> <mml:mrow> <mml:mi>FoM</mml:mi> </mml:mrow> <mml:mrow> <mml:mn>1</mml:mn> </mml:mrow> </mml:msub> <mml:mo>=</mml:mo> <mml:msub> <mml:mrow> <mml:msubsup> <mml:mrow> <mml:mi>k</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>t</mml:mi> </mml:mrow> <mml:mrow> <mml:mn>2</mml:mn> </mml:mrow> </mml:msubsup> <mml:mi>Q</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>p</mml:mi> </mml:mrow> </mml:msub> </mml:mrow> </mml:math> and $${{{\rm {FoM}}}}_{2}={f}_{{\rm {p}}}{{{\rm {FoM}}}}_{1}{\times }{10}^{-9}$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:msub> <mml:mrow> <mml:mi>FoM</mml:mi> </mml:mrow> <mml:mrow> <mml:mn>2</mml:mn> </mml:mrow> </mml:msub> <mml:mo>=</mml:mo> <mml:msub> <mml:mrow> <mml:mi>f</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>p</mml:mi> </mml:mrow> </mml:msub> <mml:msub> <mml:mrow> <mml:mi>FoM</mml:mi> </mml:mrow> <mml:mrow> <mml:mn>1</mml:mn> </mml:mrow> </mml:msub> <mml:mo>×</mml:mo> <mml:msup> <mml:mrow> <mml:mn>10</mml:mn> </mml:mrow> <mml:mrow> <mml:mo>−</mml:mo> <mml:mn>9</mml:mn> </mml:mrow> </mml:msup> </mml:mrow> </mml:math> ) 27.9 and 500, respectively. These and the $${k}_{t}^{2}$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msubsup> <mml:mrow> <mml:mi>k</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>t</mml:mi> </mml:mrow> <mml:mrow> <mml:mn>2</mml:mn> </mml:mrow> </mml:msubsup> </mml:math> are significantly higher than previously reported AlN/AlScN-based resonators operating at similar frequencies. Fabricated 3-element and 6-element filters formed from these resonators demonstrated low insertion losses (IL) of 1.86 and 3.25 dB, and −3 dB bandwidths (BW) of 680 MHz (fractional BW of 3.9%) and 590 MHz (fractional BW of 3.3%) at a ~17.4 GHz center frequency. The 3-element and 6-element filters achieved excellent linearity with in-band input third-order intercept point (IIP3) values of +36 and +40 dBm, respectively, which are significantly higher than previously reported acoustic filters operating at similar frequencies.
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Mariana Amorim Fraga, Humber Furlan, Rodrigo Sávio Pessoa et al. · Microsystem Technologies · 2013 · 156 citations
Piezoelectric thin AlN films for bulk acoustic wave (BAW) resonators
H.P. Loebl, M. Klee, C. Metzmacher et al. · Materials Chemistry and Physics · 2003 · 152 citations