Inspection and comparative analysis of light and thermal response dynamics of Cu/V₂O₅/n-Si and Cu/La-V₂O₅/n-Si MIS diodes

Doping dependence of the barrier height and ideality factor of Au/n-GaAs Schottky diodes at low temperatures

Mantu K. Hudait, S. B. Krupanidhi · Physica B Condensed Matter · 2001 · 130 citations

Electrical Engineering, Low Temperatures, Engineering +5

Oncurrent-voltage and capacitance-voltage characteristics of metal-semiconductor contacts

A. Türüt · TURKISH JOURNAL OF PHYSICS · 2020 · 124 citations

Device Modeling, Electrical Engineering, Semiconductor Device +14

Luminescence and electrochemical properties of rare earth (Gd, Nd) doped V₂O₅ nanostructures synthesized by a non-aqueous sol–gel route

Arumugam Venkatesan, Krishna Chandar Nagamuthu Raja, Arumugam Kandasamy et al. · RSC Advances · 2015 · 77 citations

Materials Science, Non-aqueous Sol–gel Route, Experimental Synthesis +14

Impact of Annealing Temperature on Spin Coated V2O5 Thin Films as Interfacial Layer in Cu/V2O5/n-Si Structured Schottky Barrier Diodes

V. Balasubramani, J. Chandrasekaran, R. Marnadu et al. · Journal of Inorganic and Organometallic Polymers and Materials · 2019 · 76 citations

Materials Engineering, Materials Science, Engineering +8

Upgraded photosensitivity under the influence of Yb doped on V2O5 thin films as an interfacial layer in MIS type Schottky barrier diode as photodiode application

V. Balasubramani, J. Chandrasekaran, V. Manikandan et al. · Journal of Solid State Chemistry · 2021 · 60 citations

Materials Science, Electrical Engineering, Engineering +10