Valley-Polarized Topological Phases with In-Plane Magnetization

Abstract

The coexistence of valley polarization and topology has considerably facilitated the applications of 2D materials toward valleytronics device technology. However, isolated and distinct valleys are required to observe the valley-related quantum phenomenon. Herein, we report a new mechanism to generate in-plane magnetization direction-dependent isolated valley carriers by preserving or breaking the mirror symmetry in a 2D system. First-principle calculations are carried out on a prototype material, W₂MnC₂O₂ MXene, to demonstrate the mechanism. A valley-coupled topological phase transition among Weyl semimetal, valley-polarized quantum anomalous Hall insulator, and topological semimetal is observed by manipulating the in-plane magnetization directions in W₂MnC₂O₂. Monte Carlo simulations of W₂MnC₂O₂ show that the estimated Curie temperature is around 170 K, indicating the possibility of observing valley-polarized topological states at higher temperatures. Our finding provides a generalized platform for investigating the valley and topological physics, which is extremely important for future quantum information processing applications.