Performance optimization of FASnI3 based perovskite solar cell through SCAPS-1D simulation

Abstract

The article provides a detailed look at the fabrication of a high-performance structure for FASnI 3 -based perovskite solar cells (PSCs). The FTO/CeO 2 /FASnI 3 /CuI/Au structure is designed using the Solar Cell Capacitance Simulator in One Dimension (SCAPS-1D) to investigate the fabricated PSC's performance. This investigation's main objective is to improve PSCs performance by using non-traditional Hole transport layer (HTL) and Electron transport layer (ETL) materials, such as CeO 2 and CuI, which have both been the subject of limited research. Moreover, the investigation seeks to determine the impact of several perovskite layer characteristics, including bandgap (Eg), electron affinity (χ), acceptor density (N A ), thickness (t), and defect density (Nt). Additionally, this study also investigates the effect of various back contact work functions. Significant improvements in solar cell parameters, such as power conversion efficiency (PCE) from 22.06% to 24.87% and current density (Jsc) from 26.0274 to 30.675 mA/cm 2 , were observed by optimizing the device's parameters. In contrast, the fill factor (FF) and open circuit voltage (Voc) decreased their values from 86.13% to 87.10% and 0.9843 to 0.9308 V, respectively. These findings show that our designed solar cell structure performs better than those with conventionally used HTLs and ETLs. Consequently, this study highlights the potential benefits of lead-free PSCs and presents fresh opportunities for their development and use in various solar applications. • Using SCAPS-1D, the FTO/CeO 2 /FASnI 3 /CuI/Au solar cell structure was used to examine the PSC's performance. • PSCs performance is improved using a non-traditional hole transport layer (HTL) and electron transport layer (ETL). • The impact of several perovskite layer characteristics, including bandgap (Eg), electron affinity (χ), acceptor density (N A ), thickness (t), and defect density (Nt) are studied. • Power conversion efficiency (PCE) and current density (Jsc) are, respectively, enhanced to 23.86 % and 30.099 mA/cm 2 .