Laser Patterning for 2D Lateral and Vertical VS₂/MoS₂ Metal/Semiconducting Heterostructures

Abstract

Abstract 2D metal/semiconducting heterostructures have attracted extensive attention for potential applications in future electronic and optoelectronic devices. However, the simple and fast preparation of patterned metal/semiconducting heterostructures with controllable channel lengths still faces challenges. Here, a simple and reliable laser patterning method for preparing patterned lateral/vertical 1T/2H VS 2 /MoS 2 metal/semiconducting heterostructures is reported. Specifically, site‐selective etching of VS 2 can be realized through the combination of laser radiation and acid solution etching. Further, pre‐patterned VS 2 nanoplates with edge dangling bonds can offer effective nucleation points for the lateral epitaxial growth of MoS 2 , thus generating patterned VS 2 ‐MoS 2 lateral heterostructures. The laser processing method can further be used to create patterned VS 2 /MoS 2 vertical van der Waals (vdWHs), which can only selectively etch the upper layer VS 2 while maintaining the intrinsic structure of the bottom layer MoS 2 . The obtained patterned VS 2 /MoS 2 vdWHs show a similar channel length of ≈420 nm, and the VS 2 vdW contact MoS 2 transistor is fabricated, delivering an On‐state current of 4.01 µA/µm, and carrier mobility of 3.56 cm 2 s −1 V −1 . This approach is also general for preparing patterned VSe 2 , VSe 2 /WSe 2 heterostructures.