High Quality Epitaxial Piezoelectric and Ferroelectric Wurtzite Al_1‐<i>_x</i>Sc<i>_x</i>N Thin Films

Abstract

Abstract Piezoelectric and ferroelectric wurtzite are promising to reshape modern microelectronics because they can be easily integrated with mainstream semiconductor technology. Sc doped AlN (Al 1‐ x Sc x N) has attracted much attention for its enhanced piezoelectric and emerging ferroelectric properties, yet the commonly used sputtering results in polycrystalline Al 1‐ x Sc x N films with high leakage current. Here, the pulsed laser deposition of single crystalline epitaxial Al 1‐ x Sc x N thin films on sapphire and 4H‐SiC substrates is reported. Pure wurtzite phase is maintained up to x = 0.3 with ≤0.1 at% oxygen contamination. Polarization is estimated to be 140 µC cm −2 via atomic scale microscopy imaging and found to be switchable via a scanning probe. The piezoelectric coefficient is found to be five times of the undoped one when x = 0.3, making it desirable for high‐frequency radiofrequency (RF) filters and 3D nonvolatile memories.