Utilizing Domain Engineering to Achieve High-Polarization Relaxor Ferroelectrics for Low-Consumption Ceramic Capacitors

Abstract

This study focuses on incorporating NaNbO₃ (NN) into the Ba_0.85Ca_0.15Zr_0.9Ti_0.1O₃ (BCZT) lattice to form (1 - <i>x</i>)BCZT-<i>x</i>NN ceramics. Although antiferroelectricity was not observed, an observed domain-movement-diminishment behavior with increasing NN dopant induced the formation of high polarization walls (HPWs) between adjacent <i>C</i>-phases. The 0.90BCZT-0.10NN composition exhibited superior polarization compared to most BCZT-based ferroelectrics, as validated by mathematical derivation. Integration of these findings revealed a <i>W</i>_rec of 3.86 J/cm³ at 360 kV/cm, with a high <i>W</i>_rec/<i>E</i>_b ratio defining energy consumption efficiency in dielectric capacitors. This work introduces a novel approach to fabricating low-consumption dielectric capacitors. Additionally, a significantly high <i>W</i>_rec of 5.36 J/cm³ was achieved with an NN dopant concentration of 0.30.