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Enhanced memory window and efficient resistive switching in stabilized BaTiO3-based RRAM through incorporation of Al2O3 interlayer

Materials ScienceNon-volatile MemoryElectrical EngineeringEngineeringStabilized Batio3-based RramApplied PhysicsMemory DeviceMicroelectronicsPhase Change MemoryEnhanced Memory WindowAl2o3 Interlayer